Method for structuring a silicon layer

62A method for structuring a silicon layer applies lacquer mask onto the silicon layer, and the silicon layer is selectively etched relative to the lacquer mask using an etching gas mixture comprising SF, HBr and He/O. The openings etched into the silicon layer with this method comprise especially s...

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Hauptverfasser:	Krönke, Matthias, Lazar, Laura
Format:	Patent
Sprache:	eng
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creator	Krönke, Matthias Lazar, Laura
description	62A method for structuring a silicon layer applies lacquer mask onto the silicon layer, and the silicon layer is selectively etched relative to the lacquer mask using an etching gas mixture comprising SF, HBr and He/O. The openings etched into the silicon layer with this method comprise especially steep sidewalls. Over and above this, the etching selectivity relative to a lacquer mask is clearly improved.
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title	Method for structuring a silicon layer
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