Method for structuring a silicon layer
62A method for structuring a silicon layer applies lacquer mask onto the silicon layer, and the silicon layer is selectively etched relative to the lacquer mask using an etching gas mixture comprising SF, HBr and He/O. The openings etched into the silicon layer with this method comprise especially s...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | 62A method for structuring a silicon layer applies lacquer mask onto the silicon layer, and the silicon layer is selectively etched relative to the lacquer mask using an etching gas mixture comprising SF, HBr and He/O. The openings etched into the silicon layer with this method comprise especially steep sidewalls. Over and above this, the etching selectivity relative to a lacquer mask is clearly improved. |
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