Process to open carbon based hardmask

Process to open carbon based hardmask

22A method of opening a carbon-based hardmask layer composed of amorphous carbon containing preferably at least 60% carbon and between 10 and 40% hydrogen. The hardmask is opened by plasma etching using an etching gas composed of H, N, and CO. The etching is preferably performed in a plasma etch rea...

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Bibliographische Detailangaben
Hauptverfasser: Wang, Judy, Sung, Shing-Li, Ma, Shawming, Pu, Bryan
Format: Patent
Sprache:eng
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Zusammenfassung:22A method of opening a carbon-based hardmask layer composed of amorphous carbon containing preferably at least 60% carbon and between 10 and 40% hydrogen. The hardmask is opened by plasma etching using an etching gas composed of H, N, and CO. The etching is preferably performed in a plasma etch reactor having an HF biased pedestal electrode and a capacitively VHF biased showerhead.