Integrated high voltage capacitor having a top-level dielectric layer and a method of manufacture therefor

Integrated high voltage capacitor having a top-level dielectric layer and a method of manufacture therefor

The present invention provides an integrated high voltage capacitor, a method of manufacture therefore, and an integrated circuit chip including the same. The integrated high voltage capacitor, among other features, includes a first capacitor plate located over or in a substrate, and an insulator lo...

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Hauptverfasser: Larkin, David L, Gokhale, Ashish V, Saraiya, Dhaval A, Mai, Quang Xuan
Format: Patent
Sprache:eng
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creator Larkin, David L
Gokhale, Ashish V
Saraiya, Dhaval A
Mai, Quang Xuan
description The present invention provides an integrated high voltage capacitor, a method of manufacture therefore, and an integrated circuit chip including the same. The integrated high voltage capacitor, among other features, includes a first capacitor plate located over or in a substrate, and an insulator located over the first capacitor plate, at least a portion of the insulator comprising an interlevel dielectric layer ( or ). The integrated high voltage capacitor further includes a second capacitor plate located over the insulator and a top-level dielectric layer located at least partially along a sidewall of the second capacitor plate.
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The integrated high voltage capacitor, among other features, includes a first capacitor plate located over or in a substrate, and an insulator located over the first capacitor plate, at least a portion of the insulator comprising an interlevel dielectric layer ( or ). 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title Integrated high voltage capacitor having a top-level dielectric layer and a method of manufacture therefor
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