Integrated high voltage capacitor having a top-level dielectric layer and a method of manufacture therefor

The present invention provides an integrated high voltage capacitor, a method of manufacture therefore, and an integrated circuit chip including the same. The integrated high voltage capacitor, among other features, includes a first capacitor plate located over or in a substrate, and an insulator located over the first capacitor plate, at least a portion of the insulator comprising an interlevel dielectric layer ( or ). The integrated high voltage capacitor further includes a second capacitor plate located over the insulator and a top-level dielectric layer located at least partially along a sidewall of the second capacitor plate.