Structure for monitoring semiconductor polysilicon gate profile
Detection of a profile drift of a polysilicon line is enhanced by a test structure that measures a bottom width and an average width of a cross sectional area of the same polysilicon line correlates the two measurements, and compares such correlation with a previous correlation of bottom width to av...
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| Zusammenfassung: | Detection of a profile drift of a polysilicon line is enhanced by a test structure that measures a bottom width and an average width of a cross sectional area of the same polysilicon line correlates the two measurements, and compares such correlation with a previous correlation of bottom width to average width of cross sectional area of the same polysilicon line. |
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