Method for fabricating a trench isolation structure having a high aspect ratio
A method for fabricating a trench isolation structure wherein a trench is formed in a silicon body and an oxide layer is formed in the trench. The silicon body is exposed at the bottom of the trench by means of an etching step, and silicon oxide is selectively grown on the silicon exposed at the bot...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A method for fabricating a trench isolation structure wherein a trench is formed in a silicon body and an oxide layer is formed in the trench. The silicon body is exposed at the bottom of the trench by means of an etching step, and silicon oxide is selectively grown on the silicon exposed at the bottom of the trench, the silicon oxide being grown from the bottom of the trench toward an upper edge of the trench. |
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