Method of forming an interconnect structure diffusion barrier with high nitrogen content

Method of forming an interconnect structure diffusion barrier with high nitrogen content

xIn an interconnect structure of an integrated circuit, a diffusion barrier film in a damascene structure is formed of a film having the composition TaN, where x is greater than 1.2 and with a thickness of 0.5 to 5 nm.

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Bibliographische Detailangaben
Hauptverfasser: Cabral, Jr, Cyril, Kaldor, Steffen K, Kim, Hyungjun, Rossnagel, Stephen M
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:xIn an interconnect structure of an integrated circuit, a diffusion barrier film in a damascene structure is formed of a film having the composition TaN, where x is greater than 1.2 and with a thickness of 0.5 to 5 nm.