Preamorphization to minimize void formation
Methods are described for eliminating void formation during the fabrication of and/or operation of memory cells/devices. According to one aspect of the present disclosure, the methods to eliminate voids include formation of an opening on a semiconductor structure, formation of a diffusion barrier la...
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Zusammenfassung: | Methods are described for eliminating void formation during the fabrication of and/or operation of memory cells/devices. According to one aspect of the present disclosure, the methods to eliminate voids include formation of an opening on a semiconductor structure, formation of a diffusion barrier layer, deposition of a metal into the opening, preamorphization of the metal using preamorphization implants, and formation of a conductivity facilitating layer. According to another aspect of the present disclosure, the methods to eliminate voids include formation of an opening on a semiconductor structure, formation of a diffusion barrier layer, deposition of a metal into the opening, preamorphization of the metal using a contact with a plasma, and formation of a conductivity facilitating layer. |
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