Ultralow dielectric constant layer with controlled biaxial stress

Ultralow dielectric constant layer with controlled biaxial stress

A method for forming a ultralow dielectric constant layer with controlled biaxial stress is described incorporating the steps of forming a layer containing Si, C, O and H by one of PECVD and spin-on coating and curing the film in an environment containing very low concentrations of oxygen and water...

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Hauptverfasser: Dimitrakopoulos, Christos Dimitrios, Gates, Stephen McConnell, Grill, Alfred, Lane, Michael Wayne, Liniger, Eric Gerhard, Liu, Xiao Hu, Nguyen, Son Van, Neumayer, Deborah Ann, Shaw, Thomas McCarroll
Format: Patent
Sprache:eng
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Zusammenfassung:A method for forming a ultralow dielectric constant layer with controlled biaxial stress is described incorporating the steps of forming a layer containing Si, C, O and H by one of PECVD and spin-on coating and curing the film in an environment containing very low concentrations of oxygen and water each less than 10 ppm. A material is also described by using the method with a dielectric constant of not more than 2.8. The invention overcomes the problem of forming films with low biaxial stress less than 46 MPa.