Semiconductor component with a MOS transistor
The source area is highly doped, like the channel area, for the same conductance type. The drain area is doped for the opposite conductance type. This results in a saving of area since the source connection (S) can at the same time be used as the well connection or substrate connection.
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| creator | Schnabel, Rainer Florian Sommer, Michael Bernhard |
| description | The source area is highly doped, like the channel area, for the same conductance type. The drain area is doped for the opposite conductance type. This results in a saving of area since the source connection (S) can at the same time be used as the well connection or substrate connection. |
| format | Patent |
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| language | eng |
| recordid | cdi_uspatents_grants_07355218 |
| source | USPTO Issued Patents |
| title | Semiconductor component with a MOS transistor |
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