Semiconductor component with a MOS transistor
The source area is highly doped, like the channel area, for the same conductance type. The drain area is doped for the opposite conductance type. This results in a saving of area since the source connection (S) can at the same time be used as the well connection or substrate connection.
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | The source area is highly doped, like the channel area, for the same conductance type. The drain area is doped for the opposite conductance type. This results in a saving of area since the source connection (S) can at the same time be used as the well connection or substrate connection. |
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