Method to increase mechanical fracture robustness of porous low k dielectric materials
The present invention provides an insulating layer for an integrated circuit comprising a porous silicon-based dielectric layer located over a substrate . The insulating layer comprises a densified layer comprising an uppermost portion of the porous silicon-based dielectric layer.
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| Hauptverfasser: | , , |
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| Format: | Patent |
| Sprache: | eng |
| Online-Zugang: | Volltext bestellen |
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| Zusammenfassung: | The present invention provides an insulating layer for an integrated circuit comprising a porous silicon-based dielectric layer located over a substrate . The insulating layer comprises a densified layer comprising an uppermost portion of the porous silicon-based dielectric layer. |
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