Silicon wafer etching process and composition

A process for etching silicon wafers using a caustic etchant in the form of an aqueous solution comprising water, a hydroxide ion source, and a chelating agent. The process produces silicon wafers substantially free from diffused metal ions.

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Hauptverfasser: Stinson, Mark G, Erk, Henry F, Zhang, Guoqiang (David), Bjelopavlic, Mick, Grabbe, Alexis, Vermeire, Jozef G, Schmidt, Judith A, Doane, Thomas E, Capstick, James R
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Sprache:eng
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creator Stinson, Mark G
Erk, Henry F
Zhang, Guoqiang (David)
Bjelopavlic, Mick
Grabbe, Alexis
Vermeire, Jozef G
Schmidt, Judith A
Doane, Thomas E
Capstick, James R
description A process for etching silicon wafers using a caustic etchant in the form of an aqueous solution comprising water, a hydroxide ion source, and a chelating agent. The process produces silicon wafers substantially free from diffused metal ions.
format Patent
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title Silicon wafer etching process and composition
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