Silicon wafer etching process and composition

A process for etching silicon wafers using a caustic etchant in the form of an aqueous solution comprising water, a hydroxide ion source, and a chelating agent. The process produces silicon wafers substantially free from diffused metal ions.

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Bibliographische Detailangaben
Hauptverfasser: Stinson, Mark G, Erk, Henry F, Zhang, Guoqiang (David), Bjelopavlic, Mick, Grabbe, Alexis, Vermeire, Jozef G, Schmidt, Judith A, Doane, Thomas E, Capstick, James R
Format: Patent
Sprache:eng
Online-Zugang:Volltext bestellen
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Beschreibung
Zusammenfassung:A process for etching silicon wafers using a caustic etchant in the form of an aqueous solution comprising water, a hydroxide ion source, and a chelating agent. The process produces silicon wafers substantially free from diffused metal ions.