Method of fabricating dual damascene interconnections of microelectronic device using diffusion barrier layer against base material
3/23/2Methods of fabricating dual damascene interconnections suitable for use in microelectronic devices and similar applications using a diffusion barrier layer to protect against base materials during processing are provided. The methods include the steps of: filling a via with a hydrogen silsesqu...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | 3/23/2Methods of fabricating dual damascene interconnections suitable for use in microelectronic devices and similar applications using a diffusion barrier layer to protect against base materials during processing are provided. The methods include the steps of: filling a via with a hydrogen silsesquioxane (HSQ)-based filler as expressed by the general chemical formula: (RSiO)x(HSiO)y, wherein x and y satisfy the relationships x+y=1 and 0 |
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