In situ hardmask pullback using an in situ plasma resist trim process
a a The present invention provides a process of manufacturing an isolation structure for use in a semiconductor device. The process includes forming an opening in a substrate through a patterned photoresist layer and a hardmask layer located over the substrate with plasma, trimming the photoresist l...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | a a The present invention provides a process of manufacturing an isolation structure for use in a semiconductor device. The process includes forming an opening in a substrate through a patterned photoresist layer and a hardmask layer located over the substrate with plasma, trimming the photoresist layer with a plasma to create an exposed portion of the hardmask layer , removing the exposed portion with a plasma to create a trench guide opening , and creating a trench through the trench guide opening with a plasma. |
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