Method for improving reliability of copper interconnects
4 Doping copper interconnects with silicon has been shown to improve Electromigration and Via Stress Migration reliability. After copper is deposited by electrochemical deposition and chemically-mechanically polished back, doping is achieved by flowing SiHover the copper interconnect for 0.5 to 5 se...
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| Sprache: | eng |
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| Zusammenfassung: | 4 Doping copper interconnects with silicon has been shown to improve Electromigration and Via Stress Migration reliability. After copper is deposited by electrochemical deposition and chemically-mechanically polished back, doping is achieved by flowing SiHover the copper interconnect for 0.5 to 5 seconds at a temperature of 325-425° C. |
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