Phosphoric acid free process for polysilicon gate definition

A method of defining a patterned, conductive gate structure for a MOSFET device on a semiconductor substrate includes forming a conductive layer over the semiconductor substrate and forming a capping insulator layer over the conductive layer. An anti-reflective coating (ARC) layer is formed over the...

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Bibliographische Detailangaben
Hauptverfasser: Lin, Li-Te S, Chen, Fang-Cheng, Lin, Huin-Jer, Chiu, Yuan-Hung, Tao, Hun-Jan
Format: Patent
Sprache:eng
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Zusammenfassung:A method of defining a patterned, conductive gate structure for a MOSFET device on a semiconductor substrate includes forming a conductive layer over the semiconductor substrate and forming a capping insulator layer over the conductive layer. An anti-reflective coating (ARC) layer is formed over the capping insulator layer and a patterned photoresist shape is formed on the ARC layer. A first etch procedure using the photoresist shape as an etch mask defines a stack comprised of an ARC shape and a capping insulator shape. A second etch procedure using the stack as an etch mask defines the patterned, conductive gate structure in the conductive layer.