Plasma treatment for silicon-based dielectrics

2 2 An embodiment of the invention is a method of manufacturing a semiconductor wafer. The method includes depositing spin-on-glass material over the semiconductor wafer (step ), modifying a top surface of the spin-on glass material to form a SiOlayer (step ), applying a vapor prime (step ), forming a photoresist layer over the spin-on-glass material (step ), patterning the photoresist layer (step ), and then etching the semiconductor wafer (step ). Another embodiment of the invention is a method of manufacturing a dual damascene back-end layer on a semiconductor wafer. The method includes depositing spin-on-glass material over the dielectric layer and within the via holes (step ), modifying a top surface of the spin-on glass material to form a SiOlayer (step ), applying a vapor prime (step ), forming a photoresist layer over said spin-on-glass material (step ), patterning the photoresist layer (step ), and etching trench spaces (step ).