Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory

Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory

A magnetoresistance effect element includes a first ferromagnetic layer, insulating layer overlying the first ferromagnetic layer, and second ferromagnetic layer overlying the insulating layer. The insulating layer has formed a through hole (A) having an opening width not larger than 20 nm, and the...

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Hauptverfasser: Okuno, Shiho, Ohsawa, Yuichi, Haneda, Shigeru, Kamiguchi, Yuzo, Kishi, Tatsuya
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Sprache:eng
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creator Okuno, Shiho
Ohsawa, Yuichi
Haneda, Shigeru
Kamiguchi, Yuzo
Kishi, Tatsuya
description A magnetoresistance effect element includes a first ferromagnetic layer, insulating layer overlying the first ferromagnetic layer, and second ferromagnetic layer overlying the insulating layer. The insulating layer has formed a through hole (A) having an opening width not larger than 20 nm, and the first and second ferromagnetic layers are connected to each other via the through hole.
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title Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory
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