Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory
A magnetoresistance effect element includes a first ferromagnetic layer, insulating layer overlying the first ferromagnetic layer, and second ferromagnetic layer overlying the insulating layer. The insulating layer has formed a through hole (A) having an opening width not larger than 20 nm, and the...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A magnetoresistance effect element includes a first ferromagnetic layer, insulating layer overlying the first ferromagnetic layer, and second ferromagnetic layer overlying the insulating layer. The insulating layer has formed a through hole (A) having an opening width not larger than 20 nm, and the first and second ferromagnetic layers are connected to each other via the through hole. |
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