Process for defect reduction in electrochemical plating

Process for defect reduction in electrochemical plating

2 x A pre-ECD surface treatment. After forming the barrier material and seed layer, the surface of the seed layer is treated with an Hplasma to remove surface contamination, reduce any CuO(), and improve wettability. The ECD copper film is then formed over the seed layer.

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Lu, Jiong-Ping, Smith, Patricia B
Format: Patent
Sprache:eng
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:2 x A pre-ECD surface treatment. After forming the barrier material and seed layer, the surface of the seed layer is treated with an Hplasma to remove surface contamination, reduce any CuO(), and improve wettability. The ECD copper film is then formed over the seed layer.