Method of fabricating a composite gate dielectric layer
x≦2A semiconductor device having composite dielectric layer formed between a silicon substrate and a gate electrode. The composite gate dielectric layer including a layer of silicon oxide, SiO, having a dielectric constant of greater than about 3.9 and about 12 or less, and a complementary dielectri...
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| Sprache: | eng |
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| Zusammenfassung: | x≦2A semiconductor device having composite dielectric layer formed between a silicon substrate and a gate electrode. The composite gate dielectric layer including a layer of silicon oxide, SiO, having a dielectric constant of greater than about 3.9 and about 12 or less, and a complementary dielectric layer for inhibiting the flow of leakage current through the composite dielectric layer. |
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