Magnetic memory device having magnetic shield layer, and manufacturing method thereof

A magnetic memory device includes a first wiring layer which runs in the first direction, a memory element which is arranged above the first wiring layer, second wiring layers which are arranged on the memory element and run in a second direction different from the first direction, and a first magne...

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Bibliographische Detailangaben
1. Verfasser: Hosotani, Keiji
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A magnetic memory device includes a first wiring layer which runs in the first direction, a memory element which is arranged above the first wiring layer, second wiring layers which are arranged on the memory element and run in a second direction different from the first direction, and a first magnetic shield layer which is formed on the side surface of each second wiring layer and formed around the side surface of the memory element.