X-Y address type solid-state image pickup device with an image averaging circuit disposed in the noise cancel circuit

The invention relates to an X-Y address type solid-state image pickup device manufactured by a CMOS process, and has an object to provide an X-Y address type solid-state image pickup device in which a chip area is not increased, manufacturing costs are suppressed, and an image averaging processing can be carried out. Pixel regions Pmn are arranged in a matrix form in regions defined by horizontal selection lines RWm and vertical selection lines CLn. Each of the pixel regions Pmn includes a photodiode a source follower amplifier for converting an electric charge of the photodiode into a voltage and amplifying it to output image data, and a horizontal selection transistor for outputting the image data to a predetermined one of the vertical selection lines CLn. An amplifier/noise cancel circuit has a built-in image averaging circuit for carrying out an averaging processing of the image data outputted from at least two of the plurality of the pixel regions Pmn.