Semiconductor device and process for manufacturing the same
The present invention provides a semiconductor device comprising: a semiconductor layer; a gate electrode formed on the semiconductor layer via a gate insulation film; and a first insulation film formed at one or more of sidewalls of the semiconductor layer, the gate insulation film and the gate ele...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | The present invention provides a semiconductor device comprising: a semiconductor layer; a gate electrode formed on the semiconductor layer via a gate insulation film; and a first insulation film formed at one or more of sidewalls of the semiconductor layer, the gate insulation film and the gate electrode; wherein the first insulation film overlies a part of the gate insulation film surface. According to the semiconductor device, leakage current at the isolation edge can be suppressed and thus reliability can be improved. |
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