Method for improving a simulation model of photolithographic projection

A method is provided for improving a photolithographic simulation model of the photolithographic simulation of a pattern formed on a photomask. Proceeding from a two-dimensional simulation model that takes account of the physical-chemical processes during lithography, a frequency-dependent intensity...

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Bibliographische Detailangaben
Hauptverfasser: Küchler, Bernd, Ziebold, Ralf, Nölscher, Christoph
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A method is provided for improving a photolithographic simulation model of the photolithographic simulation of a pattern formed on a photomask. Proceeding from a two-dimensional simulation model that takes account of the physical-chemical processes during lithography, a frequency-dependent intensity loss is calculated which is determined by multiplication of the simulated intensity distribution in the Fourier space by a filter function. An accurate calculation of the intensity distribution in the substrate plane is obtained. This method achieves the accuracy of three-dimensional models with a significantly shorter processing duration and is further suitable in particular for the calculation of OPC structures.