Erroneous operation preventing circuit of non-volatile memory device

a An erroneous operation preventing circuit of an electrically rewritable non-volatile memory device is for setting one or more operational modes of a plurality of operational modes including at least a first reading mode of reading out data from a memory array a programming mode, an erasing mode and a second reading mode of reading out data not stored in the memory array in accordance with an input control command, and for performing a predetermined process in the set operational modes. The erroneous operation preventing circuit comprises an operational mode enforcing circuit for setting the first reading mode regardless of the input of the control command, in a data protection status where the programming mode and the erasing mode are inhibited from being set in accordance with a control signal for protecting predetermined data.