Titanium underlayer for lines in semiconductor devices
A thin Titanium underlayer is included beneath a Titanium rich Titanium Nitride layer in a metal line on a silicon substrate to reduce stress voiding.
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| creator | Ng, Khim Hong Ng, Yeow Keong Koh, Kar Hwee |
| description | A thin Titanium underlayer is included beneath a Titanium rich Titanium Nitride layer in a metal line on a silicon substrate to reduce stress voiding. |
| format | Patent |
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| language | eng |
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| source | USPTO Issued Patents |
| title | Titanium underlayer for lines in semiconductor devices |
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