Photoresist suitable for use in 157 nm photolithography and including a polymer based on fluorinated norbornene derivatives

A photoresist that is suitable for use in 157 nm photolithography includes a polymer based on fluorinated norbornene derivatives.

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Hauptverfasser:	Hohle, Christoph, Dammel, Ralph, Houlihan, Michael Francis
Format:	Patent
Sprache:	eng
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creator	Hohle, Christoph Dammel, Ralph Houlihan, Michael Francis
description	A photoresist that is suitable for use in 157 nm photolithography includes a polymer based on fluorinated norbornene derivatives.
format	Patent
fullrecord	<record><control><sourceid>uspatents_EFH</sourceid><recordid>TN_cdi_uspatents_grants_07169531</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>07169531</sourcerecordid><originalsourceid>FETCH-uspatents_grants_071695313</originalsourceid><addsrcrecordid>eNqNjUEKwkAMRbtxIeodcgHBUmpxLYpLF-5latM2ME2GZKZQvLwjeABXj89_n78u3vdRoigaWQRLFF3rEXpRSIZADGXdAE8QvpqnOMqgLowLOO5y_fKpIx7AQRC_TKjQOsMOhKH3SZTYxRxZtBVlZIQOlWYXaUbbFqveecPdj5sCrpfH-bZPFvKMoz3z2ReHpjye6qqs_lA-XGlItQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Photoresist suitable for use in 157 nm photolithography and including a polymer based on fluorinated norbornene derivatives</title><source>USPTO Issued Patents</source><creator>Hohle, Christoph ; Dammel, Ralph ; Houlihan, Michael Francis</creator><creatorcontrib>Hohle, Christoph ; Dammel, Ralph ; Houlihan, Michael Francis ; AZ Electronic Materials USA Corp ; Infineon Technologies, AG</creatorcontrib><description>A photoresist that is suitable for use in 157 nm photolithography includes a polymer based on fluorinated norbornene derivatives.</description><language>eng</language><creationdate>2007</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7169531$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,776,798,881,64015</link.rule.ids><linktorsrc>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7169531$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Hohle, Christoph</creatorcontrib><creatorcontrib>Dammel, Ralph</creatorcontrib><creatorcontrib>Houlihan, Michael Francis</creatorcontrib><creatorcontrib>AZ Electronic Materials USA Corp</creatorcontrib><creatorcontrib>Infineon Technologies, AG</creatorcontrib><title>Photoresist suitable for use in 157 nm photolithography and including a polymer based on fluorinated norbornene derivatives</title><description>A photoresist that is suitable for use in 157 nm photolithography includes a polymer based on fluorinated norbornene derivatives.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2007</creationdate><recordtype>patent</recordtype><sourceid>EFH</sourceid><recordid>eNqNjUEKwkAMRbtxIeodcgHBUmpxLYpLF-5latM2ME2GZKZQvLwjeABXj89_n78u3vdRoigaWQRLFF3rEXpRSIZADGXdAE8QvpqnOMqgLowLOO5y_fKpIx7AQRC_TKjQOsMOhKH3SZTYxRxZtBVlZIQOlWYXaUbbFqveecPdj5sCrpfH-bZPFvKMoz3z2ReHpjye6qqs_lA-XGlItQ</recordid><startdate>20070130</startdate><enddate>20070130</enddate><creator>Hohle, Christoph</creator><creator>Dammel, Ralph</creator><creator>Houlihan, Michael Francis</creator><scope>EFH</scope></search><sort><creationdate>20070130</creationdate><title>Photoresist suitable for use in 157 nm photolithography and including a polymer based on fluorinated norbornene derivatives</title><author>Hohle, Christoph ; Dammel, Ralph ; Houlihan, Michael Francis</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_grants_071695313</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2007</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Hohle, Christoph</creatorcontrib><creatorcontrib>Dammel, Ralph</creatorcontrib><creatorcontrib>Houlihan, Michael Francis</creatorcontrib><creatorcontrib>AZ Electronic Materials USA Corp</creatorcontrib><creatorcontrib>Infineon Technologies, AG</creatorcontrib><collection>USPTO Issued Patents</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Hohle, Christoph</au><au>Dammel, Ralph</au><au>Houlihan, Michael Francis</au><aucorp>AZ Electronic Materials USA Corp</aucorp><aucorp>Infineon Technologies, AG</aucorp><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Photoresist suitable for use in 157 nm photolithography and including a polymer based on fluorinated norbornene derivatives</title><date>2007-01-30</date><risdate>2007</risdate><abstract>A photoresist that is suitable for use in 157 nm photolithography includes a polymer based on fluorinated norbornene derivatives.</abstract><oa>free_for_read</oa></addata></record>
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title	Photoresist suitable for use in 157 nm photolithography and including a polymer based on fluorinated norbornene derivatives
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-25T09%3A29%3A20IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-uspatents_EFH&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Hohle,%20Christoph&rft.aucorp=AZ%20Electronic%20Materials%20USA%20Corp&rft.date=2007-01-30&rft_id=info:doi/&rft_dat=%3Cuspatents_EFH%3E07169531%3C/uspatents_EFH%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true