Photoresist suitable for use in 157 nm photolithography and including a polymer based on fluorinated norbornene derivatives
A photoresist that is suitable for use in 157 nm photolithography includes a polymer based on fluorinated norbornene derivatives.
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A photoresist that is suitable for use in 157 nm photolithography includes a polymer based on fluorinated norbornene derivatives. |
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