Boron doped diamond

3A layer of single crystal boron doped diamond produced by CVD and having a total boron concentration which is uniform. The layer is formed from a single growth sector, or has a thickness exceeding 100 μm, or has a volume exceeding 1 mm, or a combination of such characteristics.

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	Scarsbrook, Geoffrey Alan, Martineau, Philip Maurice, Twitchen, Daniel James, Whitehead, Andrew John, Cooper, Michael Andrew, Dorn, Bärbel Susanne Charlotte
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	3A layer of single crystal boron doped diamond produced by CVD and having a total boron concentration which is uniform. The layer is formed from a single growth sector, or has a thickness exceeding 100 μm, or has a volume exceeding 1 mm, or a combination of such characteristics.