Method of forming copper sulfide layer over substrate

Methods of forming copper sulfide regions or layers over a substrate are disclosed. The copper sulfide regions or layers are formed by contacting a sulfide compound with a substrate containing at least copper and contacting a copper vapor precursor with the substrate to form the copper sulfide layer. Methods of making a memory devices/cells containing a copper sulfide layer, methods of using the memory devices/cells, and devices such as computers containing the memory devices/cells are also disclosed.