Methods of forming buried bit line DRAM circuitry

Methods of forming buried bit line DRAM circuitry

A method of forming buried bit line DRAM circuitry includes collectively forming a buried bit line forming trench, bit line vias extending from the bit line forming trench, and memory array storage node vias within a dielectric mass using only two masking steps. Conductive material is simultaneously...

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Bibliographische Detailangaben
Hauptverfasser: Liao, Ann K, Westphal, Michael J
Format: Patent
Sprache:eng
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Zusammenfassung:A method of forming buried bit line DRAM circuitry includes collectively forming a buried bit line forming trench, bit line vias extending from the bit line forming trench, and memory array storage node vias within a dielectric mass using only two masking steps. Conductive material is simultaneously deposited to within the buried bit line forming trench, the bit line vias, and the memory storage node vias within the dielectric mass. Other aspects and implementations are contemplated.