Etching method
2 2 An etching method comprises a step of forming a via hole structure based on a photoresist film layer for forming a wiring pattern, a silicon oxide film layer which is a hard mask layer formed under the photoresist film, and an organic Low-k film layer formed under the hard mask layer, wherein in...
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| Sprache: | eng |
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| Zusammenfassung: | 2 2 An etching method comprises a step of forming a via hole structure based on a photoresist film layer for forming a wiring pattern, a silicon oxide film layer which is a hard mask layer formed under the photoresist film, and an organic Low-k film layer formed under the hard mask layer, wherein in the step, the organic film layer and the organic Low-k film layer are etched by using a mixture gas of Ngas, Hgas, and a CF gas. |
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