Nitrogen-free dielectric anti-reflective coating and hardmask

Methods are provided for depositing a dielectric material. The dielectric material may be used for an anti-reflective coating or as a hardmask. In one aspect, a method is provided for processing a substrate including introducing a processing gas comprising a silane-based compound and an organosilico...

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Bibliographische Detailangaben
Hauptverfasser:	Kim, Bok Hoen, Rathi, Sudha, Ahn, Sang H, Bencher, Christopher D, Wang, Yuxiang May, M'Saad, Hichem, Silvetti, Mario D
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	Methods are provided for depositing a dielectric material. The dielectric material may be used for an anti-reflective coating or as a hardmask. In one aspect, a method is provided for processing a substrate including introducing a processing gas comprising a silane-based compound and an organosilicon compound to the processing chamber and reacting the processing gas to deposit a nitrogen-free dielectric material on the substrate. The dielectric material comprises silicon and oxygen.