Method of fabricating silicon nitride nanodots

2 A method of forming silicon nitride nanodots that comprises the steps of forming silicon nanodots and then nitriding the silicon nanodots by exposing them to a nitrogen containing gas. Silicon nanodots were formed by low pressure chemical vapor deposition. Nitriding of the silicon nanodots was per...

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Bibliographische Detailangaben
Hauptverfasser: Beulens, Jacobus Johannes, Wan, Yuet Mei
Format: Patent
Sprache:eng
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Zusammenfassung:2 A method of forming silicon nitride nanodots that comprises the steps of forming silicon nanodots and then nitriding the silicon nanodots by exposing them to a nitrogen containing gas. Silicon nanodots were formed by low pressure chemical vapor deposition. Nitriding of the silicon nanodots was performed by exposing them to nitrogen radicals formed in a microwave radical generator, using Nas the source gas.