Line level air gaps

Line level air gaps

In a multilevel microelectronic integrated circuit, air comprises permanent line level dielectric and ultra low-K materials are via level dielectric. The air is supplied to line level subsequent to removal of sacrificial material by clean thermal decomposition and assisted diffusion of byproducts th...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Chen, Shyng-Tsong, Chiras, Stefanie Ruth, Colburn, Matthew Earl, Dalton, Timothy Joseph, Hedrick, Jeffrey Curtis, Huang, Elbert Emin, Kumar, Kaushik Arun, Lane, Michael Wayne, Malone, Kelly, Narayan, Chandrasekhar, Nitta, Satyanarayana Venkata, Purushothaman, Sampath, Rosenburg, Robert, Tyberg, Christy Sensenich, Yu, Roy RongQing
Format: Patent
Sprache:eng
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:In a multilevel microelectronic integrated circuit, air comprises permanent line level dielectric and ultra low-K materials are via level dielectric. The air is supplied to line level subsequent to removal of sacrificial material by clean thermal decomposition and assisted diffusion of byproducts through porosities in the IC structure. Optionally, air is also included within porosities in the via level dielectric. By incorporating air to the extent produced in the invention, intralevel and interlevel dielectric values are minimized.