Enhancing adhesion of silicon nitride films to carbon-containing oxide films

Adhesion between silicon nitride etch-stop layers and carbon doped oxide films may be improved by using plasma argon densification treatments of the carbon doped oxide films. The resulting surface layer of the carbon doped oxide films may be carbon-depleted and may include a relatively rough interfa...

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Bibliographische Detailangaben
Hauptverfasser: Jan, Chia-Hong, Scherban, Tracey, Zhou, Ying, Schafer, Adam, Schroeder, Brett Robert
Format: Patent
Sprache:eng
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Zusammenfassung:Adhesion between silicon nitride etch-stop layers and carbon doped oxide films may be improved by using plasma argon densification treatments of the carbon doped oxide films. The resulting surface layer of the carbon doped oxide films may be carbon-depleted and may include a relatively rough interface to improve the adhesion of deposited silicon nitride films.