Damage-free resist removal process for ultra-low-k processing
A process for removing resist from a CDO dielectric material that uses a non-damaging plasma in a reducing atmosphere under high power and using a structure or other means to limit ions from the plasma from reaching the surface of the CDO material.
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Zusammenfassung: | A process for removing resist from a CDO dielectric material that uses a non-damaging plasma in a reducing atmosphere under high power and using a structure or other means to limit ions from the plasma from reaching the surface of the CDO material. |
|---|