Semiconductor device

abccabcdThe invention relates to a high-voltage deep depletion transistor, provided in a semiconductor body having a substrate of a first conductivity type, for example the p-type, and a surface layer of the opposite conductivity type, for example the n-type for an n-channel transistor. To prevent formation of inversion layers below the gate, the channel is subdivided into a plurality of sub-channel regions mutually separated by p-type regions which serve to remove generated holes. The p-type regions extend across the whole thickness of the channel and are contacted via the substrate. Each sub-channel region may be subdivided further by intermediate p-type regions to improve the removal of holes.