Circuit of redundancy IO fuse in semiconductor device
Provided is related to a redundancy IO fuse circuit of a semiconductor device. The redundancy IO fuse circuit is advantageous to enhancing an overall processing speed of a redundancy operation by preventing a voltage drop by a threshold voltage due to an NMOS transistor, by reducing back bias effect...
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| Zusammenfassung: | Provided is related to a redundancy IO fuse circuit of a semiconductor device. The redundancy IO fuse circuit is advantageous to enhancing an overall processing speed of a redundancy operation by preventing a voltage drop by a threshold voltage due to an NMOS transistor, by reducing back bias effects, preventing a decrease of noise margins at an inverter connected to an IO bus, and by improving time delay property involved in current reduction according to variation of operation mode. |
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