Monolithically fabricated HBT amplification stage with current limiting FET
A monolithically integrated amplifier comprising at least one heterojunction bipolar transistor and at least one field effect transistor is disclosed wherein the field effect transistor provides improved ruggedness by limiting the base and/or collector current to the HBT during severe load mismatch...
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| Hauptverfasser: | , , , |
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| Format: | Patent |
| Sprache: | eng |
| Online-Zugang: | Volltext bestellen |
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| Zusammenfassung: | A monolithically integrated amplifier comprising at least one heterojunction bipolar transistor and at least one field effect transistor is disclosed wherein the field effect transistor provides improved ruggedness by limiting the base and/or collector current to the HBT during severe load mismatch and/or high overdrive. |
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