Hydrogen-less CVD TiN process for FeRAM VIA0 barrier application

The present invention is directed to a method of forming a diffusion barrier layer for a FeRAM capacitor, which includes depositing a chemical vapor deposited titanium nitride layer in a via, and treating the chemical vapor deposited titanium nitride layer using a plasma treatment substantially excl...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Zhao, Jin, Albrecht, M. Grant, Jiang, Qidu, Chen, Linlin
Format: Patent
Sprache:eng
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The present invention is directed to a method of forming a diffusion barrier layer for a FeRAM capacitor, which includes depositing a chemical vapor deposited titanium nitride layer in a via, and treating the chemical vapor deposited titanium nitride layer using a plasma treatment substantially excluding hydrogen.