Device and method to read a 2-transistor flash memory cell

The present invention relates to electronic memories, more particularly to an improved method and apparatus to read the content of compact 2-transistor flash memory cells.A method of reading a 2-transistor flash memory cell is provided. The memory cell comprises a storage transistor with a storage g...

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Bibliographische Detailangaben
Hauptverfasser: Ditewig, Anthonie Meindert Herman, Widdershoven, Franciscus Petrus, Cuppens, Roger
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:The present invention relates to electronic memories, more particularly to an improved method and apparatus to read the content of compact 2-transistor flash memory cells.A method of reading a 2-transistor flash memory cell is provided. The memory cell comprises a storage transistor with a storage gate and a selecting transistor with a select gate . The method comprises leaving the storage gate floating while the select gate is switched from a first voltage to a second voltage, whereby the first voltage is lower than the second voltage.A device according to the present invention comprises a switching circuit for leaving the storage gate floating while the select gate is switched from the first voltage to the second voltage, the first voltage being lower than the second voltage.