Semiconductor device having at least one source/drain region formed on an isolation region and a method of manufacture therefor
The present invention provides a semiconductor device and a method of manufacture therefor. The semiconductor device includes a semiconductor substrate having a gate formed there over. The semiconductor device further includes an isolation region having at least one source/drain region formed there...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | The present invention provides a semiconductor device and a method of manufacture therefor. The semiconductor device includes a semiconductor substrate having a gate formed there over. The semiconductor device further includes an isolation region having at least one source/drain region formed there over. |
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