Electroabsorption modulator
A semiconductor modulator is disclosed which exhibits a negative alpha parameter at low operating bias. The device includes at least two barrier layers with a quantum well layer therebetween. An additional layer is formed adjacent to the quantum well layer, the additional layer having a bulk bandgap...
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Format: | Patent |
Sprache: | eng |
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Zusammenfassung: | A semiconductor modulator is disclosed which exhibits a negative alpha parameter at low operating bias. The device includes at least two barrier layers with a quantum well layer therebetween. An additional layer is formed adjacent to the quantum well layer, the additional layer having a bulk bandgap energy greater than the quantum well layer so as to form a stepped well between the barrier layers. |
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