Selective dry etching of tantalum and tantalum nitride
The invention describes a method for the selective dry etching of tantalum and tantalum nitride films. Tantalum nitride layers are often used in semiconductor manufacturing. The semiconductor substrate is exposed to a reducing plasma chemistry which passivates any exposed copper. The tantalum nitrid...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | The invention describes a method for the selective dry etching of tantalum and tantalum nitride films. Tantalum nitride layers are often used in semiconductor manufacturing. The semiconductor substrate is exposed to a reducing plasma chemistry which passivates any exposed copper. The tantalum nitride films are selectively removed using an oxidizing plasma chemistry. |
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