Self-aligned magnetic clad write line and its method of formation

aA self-aligned magnetic clad bit line structure for a magnetic memory element and its method of formation are disclosed, wherein the self-aligned magnetic clad bit line structure extends within a trench and includes a conductive material, magnetic cladding sidewalls and a magnetic cladding cap. The magnetic cladding sidewalls at least partially surround the conductive material and the magnetic cladding cap is substantially recessed within the trench with respect to the top of the trench.